Antimonide-based pN terahertz mixer diodes
نویسندگان
چکیده
High frequency pN heterojunction diodes with cutoff frequencies over 1 THz have been fabricated using narrow bandgap high-mobility semiconductors. The pN heterojunction is composed of a 30 nm thick p-type In0.27Ga0.73Sb alloy and a 130 nm thick In0.69Al0.31As0.41Sb0.59 n-layer. A high-mobility n-type InAs0.66Sb0.34 contact layer is used to connect the mesa diode to a metal Ohmic contact. These alloys have a lattice constant a0=6.2 Å and are grown on semi-insulating GaAs, a0=5.65 Å, using a buffer consisting of 1 m of In0.21Ga0.19Al0.6Sb with a0=6.2 Å and 0.5 m of Ga0.35Al0.65Sb with a0=6.12 Å. © 2011 American Vacuum Society. DOI: 10.1116/1.3549885
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